期刊論文
| 學年 | 91 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2002-10-28 |
| 作品名稱 | Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN |
| 作品名稱（其他語言） | |
| 著者 | Chiou, J. W.; Mookerjee, S.; Rao, K. V. R.; Jan, J. C.; Tsai, H. M.; Asokan, K.; Pong, W. F.; Chien, F. Z.; Tsai, M. H.; Chang, Y. K.; Chen, Y. Y.; Lee, J. F.; Lee, C. C.; Chi, G. C. |
| 單位 | 淡江大學物理學系 |
| 出版者 | College Park: American Institute of Physics (AIP) |
| 著錄名稱、卷期、頁數 | Applied Physics Letters 81(18), pp.3389-3391 |
| 摘要 | As-grown and Zn-implanted wurtzite GaN samples have been studied by angle-dependent x-ray absorption near edge structure (XANES) measurements at the N and Ga K-edges and the Ga L3-edge. The angle dependence of the XANES spectra shows that the Ga–N bonds lying in the bilayer have lower energies than bonds along the c-axis, which can be attributed to the polar nature of the GaN film. The comparison of the Ga L3-edge XANES spectra of as-grown and Zn-doped GaN reveals significant dopant induced enhancement of near-edge Ga d-derived states. © 2002 American Institute of Physics. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 0003-6951 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | Pong, W. F. |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27529 ) |