期刊論文
| 學年 | 88 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2000-07-17 |
| 作品名稱 | Density functional study of silane adsorption onto Si(100) surface |
| 作品名稱（其他語言） | |
| 著者 | 林志興; Lin, Jyh-shing; Kuo, Yu-tzu |
| 單位 | 淡江大學化學學系 |
| 出版者 | Elsevier |
| 著錄名稱、卷期、頁數 | Thin Solid Films 370, pp.192-198 |
| 摘要 | Total energy pseudopotential calculations based on norm-conserving optimized pseudopotential and density functional theory (DFT) with generalized gradient approximation (GGA) have been used to study the possible pathway and corresponding energy barrier for the initial dissociative adsorption of silane (SiH4) onto Si(100)-(2×2) surface leading to the formation of SiH3 and H adsorbed on Si(100)-(2×2) i.e. Si(100)-(2×2)(SiH3:H). Our calculated results found that the formation of Si(100)-(2×2)(SiH3:H) after the SiH4 initial adsorption onto Si(100)-(2×2) surface is energetically favorable. Also the energy barrier, which is calculated to be around 0.72 eV (GGA), occurs due to the elongation of Si–H within SiH4 accompanying the unbuckling of the buckled Si=Si dimer on Si(100)-(2×2) surface. Finally, the reactive sticking coefficient for SiH4 on Si(100)-(2×2) is calculated to be around 3×10−6. |
| 關鍵字 | Silane;Silicon;Chemical vapor deposition;Chemisorption |
| 語言 | en |
| ISSN | 0040-6090 |
| 期刊性質 | 國內 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | TWN |
| 公開徵稿 | |
| 出版型式 | ,電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/24914 ) |