關鍵字查詢 | 類別:會議論文 | | 關鍵字:The Surface Morphology and Sub-surface Characteristics of ELID-Ground Single Crystal Silicon

[第一頁][上頁]1[次頁][最末頁]目前在第 1 頁 / 共有 01 筆查詢結果
序號 學年期 教師動態
1 89/1 機電系 趙崇禮 教授 會議論文 發佈 The Surface Morphology and Sub-surface Characteristics of ELID-Ground Single Crystal Silicon , [89-1] :The Surface Morphology and Sub-surface Characteristics of ELID-Ground Single Crystal Silicon會議論文The Surface Morphology and Sub-surface Characteristics of ELID-Ground Single Crystal SiliconChao, C. L.; Ma, K. J.; Liu, D. S.; Sheu, C. C.; Sheu, S. C.; Lin, Y. S.; Lin, H. Y.; Chang, F. Y.淡江大學機械與機電工程學系單晶矽;電解製程中修銳技術;研磨;表面形態;矽晶圓;Single Crystal Silicon;Electrolytic Inprocess Dressing;Grinding;Surface Morphology;Silicon Wafer第四屆奈米工程暨微系統技術研討會論文集,頁2-61-2-66經濟部技術處; 行政院國家科學委員會; 台灣大學In order to machine the 300mm-400mm silicon wafer to the specifiedsurface roughness and flatness, ELID diamond grinding were employed inthis study to investigate its feasibility. Cast iron fiber reinforceddiamond wheels were used to grind silicon wafers and various ELIDparameters were systematically tested to examine their influences onthe grinding process. The results showed that, under the same grindingconditions, the obtained surfaces were characterized by (1) thickpoly/amorphous layer with occasionally deep-penetrat
[第一頁][上頁]1[次頁][最末頁]目前在第 1 頁 / 共有 01 筆查詢結果