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物理系 彭維鋒 教授於
期刊論文
發佈
X-ray absorption spectroscopic study on Ti/n-GaN
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[94-1]
：X-ray absorption spectroscopic study on Ti/n-GaN期刊論文X-ray absorption spectroscopic study on Ti/n-GaNKumar, M. Senthil; Kumar, V. Sures; Asokan, K.;Chiou, J. W. ;Jan, J. C.; Pong, Way-faung ;Kumar, J.淡江大學物理學系Weinheim: Wiley - VCH Verlag GmbH & Co. KGaAPhysica Status Solidi. A: Applications and Materials Science 202(14), pp.R161-R163Formation of low resistance and thermally stable ohmic contacts to GaN is of considerable importance for device applications. Several metallization schemes for ohmic contacts to n-GaN with low contact resistance have been proposed and investigated by different techniques. We investigate 500 Å Ti/n-GaN contacts of as-deposited and rapid furnace annealed at 900 °C for 30 s, using X-ray diffraction pattern, I–V measurements, and X-ray absorption near edge spectra at Ti K- and L3,2-edges and elucidate the mechanism responsible for the high ohmic behaviour. These measurements indicate the formation of an interfacial TixN layer and intermetallic alloys of Ti and Ga
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