關鍵字查詢 | 類別:期刊論文 | | 關鍵字:Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room Temperature

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序號 學年期 教師動態
1 108/2 物理系 葉炳宏 教授 期刊論文 發佈 Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room Temperature , [108-2] :Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room Temperature期刊論文Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room TemperaturePo-Yi Chang; Ching-Fu Lin; Samer El Khoury Rouphael; Ting-Hsuan Huang; Chang-Mao Wu; Dominique Berling; Ping-Hung Yeh; Chia-Jung Lu; Hsin-Fei Meng; Hsiao-Wen Zan; Olivier Sopperagas sensor;IZO;sol−gel;laser annealing;NIR;flexibleACS Applied Materials & Interfaces 12(22), p.24984−24991A metal-oxide material (indium zinc oxide [IZO]) device with near-infrared (NIR) laser annealing was demonstrated on both glass and bendable plastic substrates (polycarbonate, polyethylene, and polyethylene terephthalate). After only 60 s, the sheet resistance of IZO films annealed with a laser was comparable to that of thermal-annealed devices at temperatures in the range of 200–300 °C (1 h). XPS, ATR, and AFM were used to investigate the changes in the sheet resistance and correlate them to the composition and morph
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