關鍵字查詢 | 類別:期刊論文 | | 關鍵字:Investigation of Material Removal Mechanisms Involved in ICP Etching of InGaN/GaN

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1 94/2 機電系 趙崇禮 教授 期刊論文 發佈 Investigation of Material Removal Mechanisms Involved in ICP Etching of InGaN/GaN , [94-2] :Investigation of Material Removal Mechanisms Involved in ICP Etching of InGaN/GaN期刊論文Investigation of Material Removal Mechanisms Involved in ICP Etching of InGaN/GaN感應耦合電漿蝕刻InGaN/GaN材料移除機制研究趙崇禮; 周文成; 石正宜; 馬廣仁; 陳大同淡江大學機械與機電工程學系桃園縣:國防大學理工學院中正嶺學報=Journal of Chung Cheng Institute of Technology 34(2),頁185-190The chemical inertness and high bond strength of GaN material do not permit a simple wet etch process for pattern transfer in fabrication of devices. It has been demonstrated inductively coupled plasma could significantly improve etching process producing a highly anisotropic etch profiles and high etch rate. Etching of InGaN/GaN multiple quantum wells (MQWs) materials was performed using inductively coupled Cl2/Ar plasmas, and the effects of main process parameters such as gas flow rate, induction rf power, self bias voltage, chamber pressure on the etching mechanisms and their relations to the etch rates and morphologies of InGaN/GaN materials was investigated. InGaN/GaN etch rates i
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