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1 94/2 物理系 林諭男 教授 期刊論文 發佈 Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique , [94-2] :Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique期刊論文Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique李彥志; Lee, Yen-chih; Lin, Su-jien; Pradhan, Debabrata; 林諭男; Lin, I-nan淡江大學物理學系UNCD;High speed growth;BEN;MPECVDElsevierDiamond and Related Materials 15(2-3), pp.353-356Ultrananocrystalline diamond (UNCD) films, which possess very smooth surface, were synthesized using CH4/Ar plasma. When the nucleation process was carried out under methane and hydrogen (CH4/H2) plasma with negative DC bias voltage, no pretreatment on substrate was required prior to the formation of diamond nuclei. The average grain size of BEN induced diamond nuclei is about 20∼30 nm, with the nucleation site density more than 1011 sites/cm2. The growth rate of UNCD is markedly enhanced due to the application of BEN induced nuclei. Moreover, the growth rate of UNCD films was more significantly affected by the substrate temperature, but w
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