關鍵字查詢 | 類別:期刊論文 | | 關鍵字:Energy relaxation dynamics in vertically coupled multi-stacked InAs/GaAs quantum dots

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序號 學年期 教師動態
1 105/1 物理系 林大欽 教授 期刊論文 發佈 Energy relaxation dynamics in vertically coupled multi-stacked InAs/GaAs quantum dots , [105-1] :Energy relaxation dynamics in vertically coupled multi-stacked InAs/GaAs quantum dots期刊論文Energy relaxation dynamics in vertically coupled multi-stacked InAs/GaAs quantum dotsAntaryami Mohanta; Der-Jun Jang; Shu-Kai Lu; Dah-Chin Ling; J. S. WangApplied Physics Letters 110(3), 033107(4 pages)Effect of GaAs spacer layer thickness (dGaAs) on carrier capture, and the relaxation process is studied in multi-stacked InAs/GaAs quantum dots by photoluminescence and time-resolved photoluminescence. Auger scattering is the dominating process for carrier relaxation above dGaAs of 15 nm. At dGaAs of 10 nm, the carrier relaxation process is faster due to the combined effect of both single longitudinal optical phonon and Auger scattering resulting in higher photoluminescence intensity. The photoluminescence rise time corresponding to carrier capture and relaxation in quantum dots is longer at 3.06 eV excitation than that at 1.53 eV due to the effect of intervalley scattering in GaAs.en_US0003-6951;107
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