關鍵字查詢 | 類別:期刊論文 | | 關鍵字:Electronic and bonding structures of amorphous Si–C–N thin films by x-ray absorption spectroscopy

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序號 學年期 教師動態
1 90/1 物理系 彭維鋒 教授 期刊論文 發佈 Electronic and bonding structures of amorphous Si–C–N thin films by x-ray absorption spectroscopy , [90-1] :Electronic and bonding structures of amorphous Si–C–N thin films by x-ray absorption spectroscopy期刊論文Electronic and bonding structures of amorphous Si–C–N thin films by x-ray absorption spectroscopyTsai, H. M.; Jan, J. C.; Chiou, J. W.; Pong, W. F.; Tsai, M. H.; Chang, Y. K.; Chen, Y. Y.; Yang, Y. W.; Lai, L. J.; Wu, J. J.; Wu, C. T.; Chen, K. H.; Chen, L. C.淡江大學物理學系silicon compounds; sputtered coatings; XANES; noncrystalline structure; electronic structure; bonds (chemical); Young's modulusCollege Park: American Institute of PhysicsApplied Physics Letters 79(15), pp.2393-2395X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si–C–N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si–C–N contain a relatively large 1s→π∗ peak, indicating that a substantial percentage of carbon atoms in the a-Si–C–N films have sp2 or graphite-like bonding. Both the observed sp2
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