關鍵字查詢 | 類別:期刊論文 | | 關鍵字:Carrier recombination dynamics in electronically coupled multi-layer InAs/GaAs quantum dots

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序號 學年期 教師動態
1 106/2 物理系 林大欽 教授 期刊論文 發佈 Carrier recombination dynamics in electronically coupled multi-layer InAs/GaAs quantum dots , [106-2] :Carrier recombination dynamics in electronically coupled multi-layer InAs/GaAs quantum dots期刊論文Carrier recombination dynamics in electronically coupled multi-layer InAs/GaAs quantum dotsAntaryami Mohantaa; Der-Jun Jang; Shu-Kai Lu; Dah-Chin Ling; J.S. Wang; R.-B. Chen; F.-C. ChuangPhotoluminescence;InAs/GaAs quantum dots;Carrier dynamics;Phonon bottleneck effectJournal of Luminescence, 195, 109 (2018)Optical properties of multi-layer InAs/GaAs quantum dots (QDs) with different GaAs spacer layer thicknesses (dGaAs) of 20, 15 and 10 nm are investigated by time-integrated and time-resolved photoluminescence (PL) spectroscopy. The energy spacing between ground and excited state is observed to be decreased with decrease in dGaAs and increased with increase in excitation intensity. The rate of carrier capture and energy relaxation in QDs is found to be slower at excitation energy of 3.06 eV than that at 1.53 eV which is attributed to intervalley scattering in GaAs. The effect of interv
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