關鍵字查詢 | 類別:期刊論文 | | 關鍵字:Applications of p-n Homojunction ZnO Nanowires to One-Diode One-Memristor RRAM Arrays

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序號 學年期 教師動態
1 108/2 物理系 葉炳宏 教授 期刊論文 發佈 Applications of p-n Homojunction ZnO Nanowires to One-Diode One-Memristor RRAM Arrays , [108-2] :Applications of p-n Homojunction ZnO Nanowires to One-Diode One-Memristor RRAM Arrays期刊論文Applications of p-n Homojunction ZnO Nanowires to One-Diode One-Memristor RRAM ArraysJui-Yuan Chen, Min-Ci Wu, Yi-Hsin Ting, Wei-Che Lee, Ping-Hung Yeh, and Wen-Wei Wunanowires;RRAM;diode;ZnO;homojunctionScripta MaterialiaNanowire (NW) structure is superior at defining the direction of device due to its one-dimension feature. In this work, the p-n ZnO NWs were successfully synthesized, and were able to vertically grow on Ta2O5 substrate. Thus, the well-performed Au/ p-n ZnO NWs/ Ta2O5/ Au one-diode one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited excellent rectifying behavior, but also played the role of oxygen storing during filaments formation. Therefore, the low-leakage device aimed to build high-density crossbar arrays which was required for accelerating the combination of 5G with AI in near future applications.en1872-8456國外SCI;否GBR
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