關鍵字查詢 | 類別:期刊論文 | | 關鍵字:Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN

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序號 學年期 教師動態
1 91/1 物理系 錢凡之 教授 期刊論文 發佈 Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN , [91-1] :Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN期刊論文Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaNChiou, J. W.; Mookerjee, S.; Rao, K. V. R.; Jan, J. C.; Tsai, H. M.; Asokan, K.; Pong, W. F.; Chien, F. Z.; Tsai, M. H.; Chang, Y. K.; Chen, Y. Y.; Lee, J. F.; Lee, C. C.; Chi, G. C.淡江大學物理學系College Park: American Institute of Physics (AIP)Applied Physics Letters 81(18), pp.3389-3391As-grown and Zn-implanted wurtzite GaN samples have been studied by angle-dependent x-ray absorption near edge structure (XANES) measurements at the N and Ga K-edges and the Ga L3-edge. The angle dependence of the XANES spectra shows that the Ga–N bonds lying in the bilayer have lower energies than bonds along the c-axis, which can be attributed to the polar nature of the GaN film. The comparison of the Ga L3-edge XANES spectra of as-grown and Zn-doped GaN reveals significant dopant induced enhancement of near-edge Ga d-derived states. © 2002 American Institute of Physics.
2 91/1 物理系 彭維鋒 教授 期刊論文 發佈 Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN , [91-1] :Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN期刊論文Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaNChiou, J. W.; Mookerjee, S.; Rao, K. V. R.; Jan, J. C.; Tsai, H. M.; Asokan, K.; Pong, W. F.; Chien, F. Z.; Tsai, M. H.; Chang, Y. K.; Chen, Y. Y.; Lee, J. F.; Lee, C. C.; Chi, G. C.淡江大學物理學系College Park: American Institute of Physics (AIP)Applied Physics Letters 81(18), pp.3389-3391As-grown and Zn-implanted wurtzite GaN samples have been studied by angle-dependent x-ray absorption near edge structure (XANES) measurements at the N and Ga K-edges and the Ga L3-edge. The angle dependence of the XANES spectra shows that the Ga–N bonds lying in the bilayer have lower energies than bonds along the c-axis, which can be attributed to the polar nature of the GaN film. The comparison of the Ga L3-edge XANES spectra of as-grown and Zn-doped GaN reveals significant dopant induced enhancement of near-edge Ga d-derived states. © 2002 American Institute of Physics.
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