教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:STM observation of surface transfer doping mechanism in 3 keV nitrogen ion implanted UNCD films
學年101
學期2
出版(發表)日期2013/02/01
作品名稱STM observation of surface transfer doping mechanism in 3 keV nitrogen ion implanted UNCD films
作品名稱(其他語言)
著者Sundaravel, B.; Panda, Kalpataru; Dhandapani R.; Panigrahi, B. K.; Nair, K. G. M.; Lin, I-Nan
單位淡江大學物理學系
出版者College Park: American Institute of Physics
著錄名稱、卷期、頁數AIP Conference Proceedings 1512(1), pp.384-385
摘要3 keV nitrogen ions are implanted into UNCD/Si from our 30 kV ion accelerator. Field emission property is enhanced upon nitrogen implantation in comparision to as-prepared UNCD. STM shows that there is agglomeration of diamond grains. CITS measurements show that diamond grains are the prominent electron emitters while grain boundaries were the prominent emitters for 75 keV N+ implantation. When N atoms are at the surface, electron emission by transfer-doping process appears to be the physical mechanism involved. When they are buried deeper as in the case of 75 keV ions, grain boundary conduction-channel process is valid.
關鍵字Diamond; Nanocrystalline materials; Grain boundaries; Ion implantation; Scanning tunneling microscopy
語言
ISSN0094-243X;1551-7616
期刊性質國外
收錄於
產學合作
通訊作者Lin, I-Nan
審稿制度
國別美國
公開徵稿
出版型式紙本;電子版
相關連結
Google+ 推薦功能,讓全世界都能看到您的推薦!