教師資料查詢 | 類別: 期刊論文 | 教師: 葉炳宏 Ping-hung Yeh (瀏覽個人網頁)

標題:A Novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltage
學年91
學期1
出版(發表)日期2002/11/01
作品名稱A Novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltage
作品名稱(其他語言)
著者Yeh, P.H.; Peng, D.Z.; Chang, T.C.; Liu, C.F.
單位淡江大學物理學系
出版者
著錄名稱、卷期、頁數Japanese Journal of Applied Physics 42, pp.1164-1167
摘要A novel poly-Si thin-film transistor with a self-aligned SiGe raised source/drain (SiGe-RSD TFT) has been proposed and fabricated. The SiGe-RSD regions were grown selectively by the ultra-high vacuum chemical vapor deposition (UHVCVD) process designed by us at 550°C. The resultant transistor structure features an ultra-thin active channel region (20 nm) and a self-aligned thick source/drain region (120 nm), and is ideally suited for optimum performance. Significant improvements in electrical characteristics, such as higher turn-on current, lower leakage current and higher drain breakdown voltage have been observed in the SiGe RSD TFT, compared to its conventional TFT counterpart. Moreover, the process is simple and no additional masks are necessary, which is consistent with conventional fabrication processes.
關鍵字
語言英文
ISSN0021-4922;1347-4065
期刊性質國外
收錄於
產學合作
通訊作者
審稿制度
國別英國
公開徵稿
出版型式,電子版,紙本
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