期刊論文

學年 102
學期 1
出版(發表)日期 2014-01-16
作品名稱 Microscopic origin of the π states in epitaxial silicene
作品名稱(其他語言)
著者 A. Fleurence; Y. Yoshida; C.-C. Lee; T. Ozaki; Y. Yamada-Takamura; Y. Hasegawa
單位
出版者
著錄名稱、卷期、頁數 Appl. Phys. Lett. 104, 021605
摘要 We investigated the electronic properties of epitaxial silicene on ZrB2(0001) thin film grown on Si(111) by means of low-temperature scanning tunneling spectroscopy and density functional theory calculations. The position of silicon atoms and thus, the localization of the valence and conduction states were deducted from the comparison of the spectra and the computed local density of states. We point out the strong contribution of pz orbitals of specific atoms to those states which indicates the π character of the conduction and valence bands. A clear correlation between hybridization of the orbitals of the Si atoms and the buckling was evidenced.
關鍵字
語言 en_US
ISSN
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度
國別 USA
公開徵稿
出版型式 ,電子版
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/117352 )