期刊論文
| 學年 | 94 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2006-01-01 |
| 作品名稱 | Fabrication of thin-GaN LED structures by Au-Si wafer bonding |
| 作品名稱（其他語言） | |
| 著者 | Hsu, S. C.; Liu, C. Y. |
| 單位 | 淡江大學化學工程與材料工程學系 |
| 出版者 | Pennington, N.J. : Electrochemical Society |
| 著錄名稱、卷期、頁數 | Electrochemical and solid-state letters 9(5), pp.171-173 |
| 摘要 | Using Au-Si wafer bonding and laser lift-off (LLO) techniques, an light emitting diode (LED) GaN epi layer was successfully transferred onto a Si substrate. After the wafer bonding, a KrF excimer laser was used to separate the GaN layer from the grown sapphire substrate. The Raman spectra results show that the quality of the transferred GaN epi layer did not change; the initial compressive stress level of the GaN epi layer was relieved by 202 MPa after transferring. The transferred GaN epi layer was further processed for use in a thin-GaN LED device. The luminance-intensity-current voltage curve results indicate a forward voltage of 3.4 V, and a luminance intensity of 204 mcd at 20 mA. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 1099-0062 |
| 期刊性質 | |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/53703 ) |