期刊論文

學年 101
學期 1
出版(發表)日期 2012-12-10
作品名稱 Fabrication of free-standing highly conducting ultrananocrystalline diamond films with enhanced electron field emission properties
作品名稱(其他語言)
著者 K.J. Sankaran; Chen, H.C.; Lee, C.Y.; Tai, N.H.; Lin, I.N.
單位 淡江大學物理學系
出版者 College Park: American Institute of Physics
著錄名稱、卷期、頁數 Applied Physics Letters 101(24), 241604(4pages)
摘要 Fabrication of free-standing/highly conducting ultrananocrystalline diamond (fc-UNCD) films at low growth temperature (<475 °C) is demonstrated. The fc-UNCD films show high conductivity of σ = 146 (Ω cm)−1 with superior electron field emission (EFE) properties, viz. low turn-on field of 4.35 V/μm and high EFE current density of 3.76 mA/cm2 at an applied field of 12.5 V/μm. Transmission electron microscopy examinations reveal the presence of Au/Cu clusters in film-to-substrate interface, which consequences in the induction of nanographite phases, surrounding the diamond grains that form conduction channels for electrons transport, ensuing in marvelous EFE properties of fc-UNCD films.
關鍵字
語言 en
ISSN 1077-3118
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Tai, N. H.; Lin, I. N.
審稿制度
國別 USA
公開徵稿
出版型式 電子版
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