期刊論文

學年 102
學期 2
出版(發表)日期 2014-03-14
作品名稱 Natural substrate lift-off technique for vertical light-emitting diodes
作品名稱(其他語言)
著者 Lee, Chia-Yu; Lan, Yu-Pin; Tu, Po-Min; Hsu, Shih-Chieh; Lin, Chien-Chung; Kuo, Hao-Chung; Chi, Gou-Chung; Chang, Chun-Yen
單位 淡江大學化學工程與材料工程學系
出版者 Japan: Japan Society of Applied Physics
著錄名稱、卷期、頁數 Applied Physics Express 7(4), 042103(4 pages)
摘要 Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical light-emitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108 cm−2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.
關鍵字
語言 en
ISSN 1882-0786
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Hsu, Shih-Chieh; Lan, Yu-Pin
審稿制度
國別 JPN
公開徵稿
出版型式 ,電子版,紙本
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