會議論文
| 學年 | 102 |
|---|---|
| 學期 | 2 |
| 發表日期 | 2014-04-26 |
| 作品名稱 | Analysis and Design Considerations of Static CMOS Logics under Process, Voltage and Temperature Variation in 90nm Process |
| 作品名稱（其他語言） | |
| 著者 | Yang, Wei-Bin; Lin, Yu-Yao; Lo, Yu-Lung |
| 作品所屬單位 | 淡江大學電機工程學系 |
| 出版者 | |
| 會議名稱 | 2014 International Conference on Information Science, Electronics and Electrical Engineering (ISEEE 2014) |
| 會議地點 | Sapporo City, Hokkaido, Japan |
| 摘要 | In this paper, we analyze the circuit characteristic of static CMOS logics and provide the size ratio of PMOS to NMOS transistors under process, voltage and temperature (PVT) variations in 90nm CMOS process. The threshold voltage of a MOS transistor is influenced seriously under PVT variations in ultralow voltages. The performances of the static CMOS logics are unstable under those conditions. To find the best size ratio region of PMOS to NMOS transistors, NOT, NAND, NOR, and XOR gates are simulated with various PVT conditions. Four kinds of gates are designed by different ratios respectively to compose the ring oscillators. By examining operating frequency, then we analyze the change of current according to various channel length and PVT conditions. By further analyzing the simulation results, if the channel length of MOS transistors is shorter than 200nm, or the operating voltage is lower than 0.5V, then the performance of MOS transistors is unstable in 90nm CMOS process. Through the data and the simulation provided by this paper, we can design the circuits with different needs, and we can also understand how each different section of PVT variations will affect the circuit in 90nm CMOS process. |
| 關鍵字 | 90nm CMOS process;size ratio;process-voltage-temperature (PVT);ring oscillators;threshold voltage |
| 語言 | en |
| 收錄於 | |
| 會議性質 | 國際 |
| 校內研討會地點 | |
| 研討會時間 | 20140426~20140428 |
| 通訊作者 | |
| 國別 | JPN |
| 公開徵稿 | Y |
| 出版型式 | 電子版 |
| 出處 | proceedings of the 2014 International Conference on Information Science, Electronics and Electrical Engineering (ISEEE 2014), pp.1653-1656 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/98020 ) |