期刊論文
| 學年 | 90 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2001-10-01 |
| 作品名稱 | Electronic and bonding structures of amorphous Si–C–N thin films by x-ray absorption spectroscopy |
| 作品名稱（其他語言） | |
| 著者 | Tsai, H. M.; Jan, J. C.; Chiou, J. W.; Pong, W. F.; Tsai, M. H.; Chang, Y. K.; Chen, Y. Y.; Yang, Y. W.; Lai, L. J.; Wu, J. J.; Wu, C. T.; Chen, K. H.; Chen, L. C. |
| 單位 | 淡江大學物理學系 |
| 出版者 | College Park: American Institute of Physics |
| 著錄名稱、卷期、頁數 | Applied Physics Letters 79(15), pp.2393-2395 |
| 摘要 | X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si–C–N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si–C–N contain a relatively large 1s→π∗ peak, indicating that a substantial percentage of carbon atoms in the a-Si–C–N films have sp2 or graphite-like bonding. Both the observed sp2 intensity and the Young’s modulus decrease with an increase in the carbon content. For N K-edge XANES spectra of the a-Si–C–N films we find the emergence of a sharp peak near the threshold when the carbon content is larger than between 9% and 36%, which indicates that carbon and nitrogen atoms tend to form local graphitic carbon nitride. |
| 關鍵字 | silicon compounds; sputtered coatings; XANES; noncrystalline structure; electronic structure; bonds (chemical); Young's modulus |
| 語言 | en |
| ISSN | 0003-6951 |
| 期刊性質 | 國外 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | Pong, W. F. |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/72608 ) |