期刊論文
| 學年 | 91 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2003-05-01 |
| 作品名稱 | A study of copper chemical mechanical polishing in urea–hydrogen peroxide slurry by electrochemical impedance spectroscopy |
| 作品名稱（其他語言） | |
| 著者 | Tsai, Tzu-hsuan; Wu, Yung-fu; Yen, Shi-chern |
| 單位 | 淡江大學化學工程與材料工程學系 |
| 出版者 | Amsterdam: Elsevier BV * North-Holland |
| 著錄名稱、卷期、頁數 | Applied Surface Science 214(1-4), pp.120-135 |
| 摘要 | The electrochemical impedance spectroscopy (EIS) technique has been used to investigate the feasibility of urea–hydrogen peroxide (urea–H2O2) slurries in copper chemical mechanical polishing (Cu CMP). The performance of the inhibiting-type and the chelating-type additives, BTA and NH4OH, were also explored. In order to analyze the surface-reaction characteristics of Cu, the equivalent circuit of double capacitor mode was mainly used to simulate the corrosion behaviors of Cu CMP in various slurries. In addition, via measuring dc potentiodynamic curves and open circuit potential (OCP), the corrosion characteristics were obtained in various slurries. Both EIS and AFM experimental results indicate that the slurry composed of 5 wt.% urea–H2O2+0.1 wt.% BTA+1 wt.% NH4OH can achieve the better Cu CMP performance. Its rms-roughness (Rq) after CMP and the removal rate (RR) attain to 2.636 nm and 552.49 nm/min, respectively. |
| 關鍵字 | Copper;Chemical mechanical polishing;Urea-hydrogen peroxide slurry;Electrochemical impedance spectroscopy;Potentiodynamic curve |
| 語言 | en |
| ISSN | 0169-4332 |
| 期刊性質 | 國外 |
| 收錄於 | SCI EI SSCI |
| 產學合作 | |
| 通訊作者 | Yen, Shi-chern |
| 審稿制度 | |
| 國別 | NLD |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/71748 ) |