期刊論文
| 學年 | 100 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2012-06-21 |
| 作品名稱 | Soft X-ray characterization of Zn1−xSnxOy electronic structure for thin film photovoltaics |
| 作品名稱（其他語言） | |
| 著者 | Mukes Kapilashrami; Coleman X. Kronawitter; Tobias Törndahl; Johan Lindahl; Adam Hultqvist; Wei-Cheng Wang; Chang, Ching-Lin; Samuel S. Mao; Jinghua Guo |
| 單位 | 淡江大學物理學系 |
| 出版者 | Cambridge: R S C Publications |
| 著錄名稱、卷期、頁數 | Physical Chemistry Chemical Physics 14, p.10154-10159 |
| 摘要 | Zinc tin oxide (Zn1−xSnxOy) has been proposed as an alternative buffer layer material to the toxic, and light narrow-bandgap CdS layer in CuIn1−x,GaxSe2 thin film solar cell modules. In this present study, synchrotron-based soft X-ray absorption and emission spectroscopies have been employed to probe the densities of states of intrinsic ZnO, Zn1−xSnxOy and SnOx thin films grown by atomic layer deposition. A distinct variation in the bandgap is observed with increasing Sn concentration, which has been confirmed independently by combined ellipsometry-reflectometry measurements. These data correlate directly to the open circuit potentials of corresponding solar cells, indicating that the buffer layer composition is associated with a modification of the band discontinuity at the CIGS interface. Resonantly excited emission spectra, which express the admixture of unoccupied O 2p with Zn 3d, 4s, and 4p states, reveal a strong suppression in the hybridization between the O 2p conduction band and the Zn 3d valence band with increasing Sn concentration. |
| 關鍵字 | Mukes Kapilashrami;Coleman X. Kronawitter;Tobias Törndahl;Johan Lindahl;Adam Hultqvist;Wei-Cheng Wang;Chang, Ching-Lin;Samuel S. Mao;Jinghua Guo |
| 語言 | en |
| ISSN | 1463-9084 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 是 |
| 國別 | GBR |
| 公開徵稿 | |
| 出版型式 | ,電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/80603 ) |