期刊論文
| 學年 | 101 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2012-08-23 |
| 作品名稱 | Hydrogenation effects of ultrananocrystalline diamond detected by X-ray absorption near edge structure and Raman spectroscopy |
| 作品名稱（其他語言） | |
| 著者 | Ray, S. C.; Erasmus, R. M.; Tsai, H. M.; Pao, C. W.; Lin, I.-N.; Pong, W. F. |
| 單位 | 淡江大學物理學系 |
| 出版者 | Tokyo: The Japan Society of Applied Physics |
| 著錄名稱、卷期、頁數 | Japanese Journal of Applied Physics 51(9), 095201(5pages) |
| 摘要 | Nitrogen-doped ultrananocrystalline diamond (UNCD) thin films functionalized with H2 are significantly affected by the sp2 hybridized carbon defects that are detected and analyzed using X-ray absorption near edge structure (XANES) and Raman spectroscopy using two different excitation wavelengths. The XANES and Raman results provide evidence for the presence of aromatic hydrocarbons and sp2 amorphous matrix in the grain boundaries when UNCD films are functionalized with H2. These hydrocarbons increase on hydrogenation leading to a decrease of the sp2-carbon defects (π* C=C bond) and an increase of sp3-carbon (σ* C–C bond). This sp3-carbon (σ* C–C bond) is evidently responsible for UNCD crystallites existence in the film structure and hence change the structural integrity, electronic structure, electrical and bonding properties. Nitrogen-doped ultrananocrystalline diamond (UNCD) thin films functionalized with H2 are significantly affected by the sp2 hybridized carbon defects that are detected and analyzed using X-ray absorption near edge structure (XANES) and Raman spectroscopy using two different excitation wavelengths. The XANES and Raman results provide evidence for the presence of aromatic hydrocarbons and sp2 amorphous matrix in the grain boundaries when UNCD films are functionalized with H2. These hydrocarbons increase on hydrogenation leading to a decrease of the sp2-carbon defects (π* C=C bond) and an increase of sp3-carbon (σ* C–C bond). This sp3-carbon (σ* C–C bond) is evidently responsible for UNCD crystallites existence in the film structure and hence change the structural integrity, electronic structure, electrical and bonding properties. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 1347-4065 0021-4922 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | Ray, S. C. |
| 審稿制度 | |
| 國別 | JPN |
| 公開徵稿 | |
| 出版型式 | 電子版 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/80489 ) |