會議論文
| 學年 | 100 |
|---|---|
| 學期 | 1 |
| 發表日期 | 2011-08-22 |
| 作品名稱 | High-quality vertical light emitting diodes fabrication by mechanical lift-off technique |
| 作品名稱（其他語言） | |
| 著者 | Tu, Po-Min; Hsu, Shih-Chieh; Chang, Chun-Yen |
| 作品所屬單位 | 淡江大學化學工程與材料工程學系 |
| 出版者 | SPIE |
| 會議名稱 | Eleventh International Conference on Solid State Lighting |
| 會議地點 | San Diego, USA |
| 摘要 | We report the fabrication of mechanical lift-off high quality thin GaN with Hexagonal Inversed Pyramid (HIP) structures for vertical light emitting diodes (V-LEDs). The HIP structures were formed at the GaN/sapphire substrate interface under high temperature during KOH wet etching process. The average threading dislocation density (TDD) was estimated by transmission electron microscopy (TEM) and found the reduction from 2×109 to 1×108 cm-2. Raman spectroscopy analysis revealed that the compressive stress of GaN epilayer was effectively relieved in the thin-GaN LED with HIP structures. Finally, the mechanical lift-off process is claimed to be successful by using the HIP structures as a sacrificial layer during wafer bonding process. |
| 關鍵字 | |
| 語言 | en_US |
| 收錄於 | EI |
| 會議性質 | 國際 |
| 校內研討會地點 | |
| 研討會時間 | 20110822~20110825 |
| 通訊作者 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | |
| 出處 | SPIE, Eleventh International Conference on Solid State Lighting |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/65469 ) |