期刊論文
| 學年 | 96 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2007-12-01 |
| 作品名稱 | Size dependence of the electronic structures and electron-phonon coupling in ZnO quantum dots |
| 作品名稱（其他語言） | |
| 著者 | Ray, S. C.; Low, Y.; Tsai, H. M.; Pao, C. W.; Chiou, J. W.; Yang, S. C.; Chien, F. Z.; Pong, W. F.; Tsai, M.-H.; Lin, K. F.; Cheng, H. M.; Hsieh, W. F.; Lee, J. F. |
| 單位 | 淡江大學物理學系 |
| 出版者 | College Park: American Institute of Physics (AIP) |
| 著錄名稱、卷期、頁數 | Applied Physics Letters 91(26), pp.262101(3 pages) |
| 摘要 | The electronic structures and optical properties of various sizes of ZnO quantum dots (QDs) were studied using x-ray absorption, photoluminescence, and Raman spectroscopy. The increase in the intensity ratio of the second-order Raman spectra of longitudinal optical mode and its fundamental mode, which is related to the strength of the electron-phonon coupling (EPC), is found to increase with the size of QD. The trend of EPC also correlates with the increase of the intensity ratio of the O 2pπ (Iπ) and 2pσ (Iσ) orbital features in the O K-edge x-ray absorption near-edge structure (XANES) as the size of QD increases. The EPC and XANES results suggest that the crystal orientations of ZnO QDs are approximately aligned with the c axis parallel with the polarization of x-ray photons. |
| 關鍵字 | crystal orientation; electron-phonon interactions; II-VI semiconductors; photoluminescence; Raman spectra; semiconductor quantum dots; wide band gap semiconductors; XANES |
| 語言 | en |
| ISSN | 0003-6951 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | 國內 |
| 通訊作者 | |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27740 ) |