期刊論文
| 學年 | 91 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2003-06-02 |
| 作品名稱 | Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy |
| 作品名稱（其他語言） | |
| 著者 | Chiou, J.W.; Jan, J.C.; Tsai, H.M.; Pong, W.F.; Tsai, M.-H.; Hong, I.-H.; Klauser, R.; Lee, J.-F.; Hsu, C.W.; Lin, H.M.; Chen, C.-C.; Shen, C.H.; Chen, L.C.; Chen, K.H. |
| 單位 | 淡江大學物理學系 |
| 出版者 | College Park: American Institute of Physics (AIP) |
| 著錄名稱、卷期、頁數 | Applied Physics Letters 82(22), pp.3949-3951 |
| 摘要 | X-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM) measurements have been employed to obtain information on the electronic structures of the GaN nanowires and thin film. The comparison of the XANES spectra revealed that the nanowires have a smaller (larger) N (Ga) K edge XANES intensity than that of the thin film, which suggests an increase (decrease) of the occupation of N 2p (Ga 4p) orbitals and an increase of the N (Ga) negative (positive) effective charge in the nanowires. The SPEM spectra showed that the Ga 3d band for the nanowires lies about 20.8 eV below the Fermi level and has a chemical shift of about -0.9 eV relative to that of the thin film. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 0003-6951 |
| 期刊性質 | 國外 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | Pong, W.F |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27563 ) |