期刊論文
| 學年 | 93 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2004-12-01 |
| 作品名稱 | Band gap modification of single-walled carbon nanotube and boron nitride nanotube under a transverse electric field |
| 作品名稱（其他語言） | |
| 著者 | Chen, Chun-wei; Lee, Ming-hsien; Clark, S.-J. |
| 單位 | 淡江大學物理學系 |
| 出版者 | Institute of Physics (IOP) |
| 著錄名稱、卷期、頁數 | Nanotechnology 15(12), pp.1837-1843 |
| 摘要 | The electronic structures of carbon (C) and boron nitride (BN) nanotubes under a transverse electric field were investigated through the first-principles pseudopotential density-functional theory (DFT) calculations. It was found that band gap modifications occur both in the semiconducting C and BN nanotubes under an external electric field by inducing a semiconductor–metal transition. The variations of the band gap sizes with transverse electric fields are very different between C and BN nanotubes. In the semiconducting C nanotube, a sharp semiconductor–metal transition does not occur until a threshold electric field is achieved; the BN nanotube, on the other hand, shows a gradual reduction of the band gap size once an external electric field is applied due to the larger ionicity of BN bonds. In addition, the semiconductor–metal transition in both C and BN nanotubes occurs at a lower value of electric field with increasing diameter. The ability to tune the band gap in both C and BN nanotubes by an external electric field provides the possibility for future electronic and electro-optic nanodevice applications. |
| 關鍵字 | electrical; magnetic and optical; Nanoscale science and low-D systems |
| 語言 | en |
| ISSN | 0957-4484 1361-6528 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | Chen, Chun-wei |
| 審稿制度 | 是 |
| 國別 | GBR |
| 公開徵稿 | |
| 出版型式 | 紙本 電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27695 ) |